{"id":4685,"date":"2023-11-20T10:46:02","date_gmt":"2023-11-20T10:46:02","guid":{"rendered":"https:\/\/futurecom.unicas.it\/?p=4685"},"modified":"2023-11-20T10:51:54","modified_gmt":"2023-11-20T10:51:54","slug":"futurecom-training-course","status":"publish","type":"post","link":"https:\/\/futurecom.unicas.it\/?p=4685","title":{"rendered":"FutureCom Training Course"},"content":{"rendered":"

Harsh Environmental Testing of RF and Microwave Circuits for Future Communications Technologies<\/h3>\n<\/div><\/section>\n
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A FutureCom training course \u201cHarsh Environmental Testing of RF and Microwave Circuits for Future Communications Technologies\u201d is to be held on 29th<\/sup> November 2023 at PTB, Braunschweig. It will be possible for attendees to join the course either in person or remotely.<\/p>\n

The course will explore testing methods to assess the performance of RF and microwave circuits in real-world and harsh environments such as above and below ambient temperatures (including at cryogenic temperatures) and at different relative humidity levels. This assessment will aid future communication technology design by offering a better understanding of where the limit of operation is when using certain materials, thus leading to better optimisation in cost and time to produce.<\/p>\n

The course begins with an overview of the different types of environmental testing that are commonly performed for the evaluation of electrical circuits including printed circuit boards (PCBs). Following this will be a look at the design of the evaluation PCBs used for environmental testing in the FutureCom project. There then follows a discussion on the importance of end\u2011launch RF connectors for use with high-frequency PCBs. Moving onto on-wafer electrical circuits, a comparison of measurements before and after thermal cycling of an impedance substrate standard (ISS) is examined for any degradation resulting from the environmental conditioning. Finally, the course concludes with a discussion of proposed EM modelling for wafers and Si-based components that will be subject to cryogenic temperatures to investigate how these conditions will impact their RF performance.<\/p>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/section>\n

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